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MTD10N10EL
TMOS E?FET ?
Power Field Effect Transistor
DPAK for Surface Mount
N?Channel Enhancement?Mode Silicon
Gate
This advanced TMOS E?FET is designed to withstand high energy
http://onsemi.com
in the avalanche and commutation modes. The new energy efficient
design also offers a drain?to?source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power
V DSS
100 V
R DS(ON) TYP
0.22 W
I D MAX
10 A
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
Features
? Avalanche Energy Specified
? Source?to?Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? I DSS and V DS(on) Specified at Elevated Temperature
? Pb?Free Package is Available
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
N?Channel
D
G
S
MARKING DIAGRAM & PIN ASSIGNMENTS
Parameter
Symbol
Value
Unit
DPAK
Drain?to?Source Voltage
Drain?to?Gate Voltage (R GS = 1.0 M W )
Gate?to?Source Voltage ? Continuous
Non?Repetitive (t p ≤ 10 ms)
Drain Current ? Continuous
? Continuous @ 100 ° C
? Single Pulse (t p ≤ 10 m s)
V DSS
V DGR
V GS
V GSM
I D
I D
I DM
100
100
± 15
± 20
10
6.0
35
Vdc
Vdc
Vdc
Vpk
Adc
Apk
1 2
4
3
CASE 369C
(Surface Mount)
STYLE 2
Gate 1
Drain 2
Source 3
YWW
10N
10ELG
4
Drain
Total Power Dissipation @ T C = 25 ° C
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C (Note 2)
Operating and Storage Temperature Range
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
P D
T J , T stg
E AS
40
0.32
1.75
?55 to
150
50
W
W/ ° C
W
° C
mJ
10N10EL
Y
WW
G
= Device Code
= Year
= Work Week
= Pb?Free Package
(V DD = 25 Vdc, V GS = 5.0 Vdc, I L = 10 Apk,
L = 1.0 mH, R G = 25 W )
ORDERING INFORMATION
Thermal Resistance
° C/W
Device
Package
Shipping ?
? Junction?to?Case
? Junction?to?Ambient (Note 1)
? Junction?to?Ambient (Note 2)
Maximum Temperature for Soldering
Purposes, 1/8 ″ from case for 10 sec
R θ JC
R θ JA
R θ JA
T L
3.13
100
71.4
260
° C
MTD10N10ELT4
MTD10N10ELT4G
DPAK
DPAK
(Pb?Free)
2500 Tape & Reel
2500 Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using minimum recommended pad
size.
2. When surface mounted to an FR4 board using 0.5 sq in pad size.
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2006
June, 2006 ? Rev. 3
1
Publication Order Number:
MTD10N10EL/D
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相关代理商/技术参数
MTD10N10ELT4G 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount
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MTD1110-7102 功能描述:马达/运动/点火控制器和驱动器 VCEO=80 IO=2 PT=5 RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube
MTD1110-7103 功能描述:马达/运动/点火控制器和驱动器 VCEO=80 IO=2 PT=5 RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube